The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Oct. 31, 2022
Tokyo Electron Limited, Tokyo, JP;
Yoshihiro Takezawa, Yamanashi, JP;
Tatsuya Miyahara, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for forming a polycrystalline silicon film includes forming a first amorphous silicon film having an island shape on a substrate. The method includes forming a second amorphous silicon film, the second amorphous silicon film covering the first amorphous silicon film. The method includes forming a third amorphous silicon film on the second amorphous silicon film. The method includes heating the substrate to a first temperature at which the first amorphous silicon film crystallizes more easily than the second amorphous silicon film. The first amorphous silicon film crystallizes at a temperature lower than that of the second amorphous silicon film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile