The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Dec. 20, 2022
Applicant:

Axcelis Technologies, Inc., Beverly, MA (US);

Inventors:

David M. Burtner, Belmont, MA (US);

Neil J. Bassom, Hamilton, MA (US);

Assignee:

Axcelis Technologies, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/48 (2006.01); C23C 14/06 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
C23C 14/48 (2013.01); C23C 14/0605 (2013.01); H01J 37/3171 (2013.01); H01J 2237/022 (2013.01); H01J 2237/31705 (2013.01);
Abstract

An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.


Find Patent Forward Citations

Burtner, David. (2026). High incidence angle graphite for particle control with dedicated low sputter yield ion beam (U.S. Patent No. 12571088). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12571088

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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