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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12568854 B1

PDFFull Text
Date of Patent:
Mar. 03, 2026

Filed:

Feb. 17, 2022

Semiconductor packages having semiconductor blocks surrounding semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kai-Fung Chang, Taipei City, TW;

Sheng-Feng Weng, Taichung City, TW;

Ming-Yu Yen, MiaoLi County, TW;

Chih-Wei Lin, Hsinchu County, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Ratisha Mehta

Assistant Examiner:

Mikka undefined Liu

Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/64 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 23/3142 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/647 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/26175 (2013.01); H01L 2224/32221 (2013.01); H01L 2224/83951 (2013.01);
Abstract

A semiconductor package includes a first substrate and a first semiconductor device. The first semiconductor device is bonded to the first substrate and includes a second substrate, a plurality of first dies and a second die. The first dies are disposed between the first substrate and the second substrate. The second die is surrounded by the first dies. A cavity is formed among the first dies, the first substrate and the second substrate, and a gap is formed between the second die and the first substrate.

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