The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jun. 14, 2023
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Michio Sakurai, Hsinchu City, TW;
Shou-Zen Chang, Hsinchu City, TW;
I Hsuan Wei, Taoyuan City, TW;
Wei-Lin Wang, Taichung City, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A semiconductor structure including a substrate and a capacitor structure is provided. The capacitor structure is disposed above the substrate. The capacitor structure includes a first electrode layer, a second electrode layer, and a first dielectric layer. The second electrode layer is disposed on the first electrode layer. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The first dielectric layer is a composite dielectric layer including at least one first silicon nitride layer and at least one first high-k dielectric layer.