The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Oct. 04, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Hui Zang, Guilderland, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Jessica M. Dechene, Watervliet, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/308 (2006.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 21/3086 (2013.01); H10D 30/024 (2025.01); H10D 64/017 (2025.01); H10D 84/834 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.