The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jan. 25, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Hsien Yang, Taichung, TW;
Chun-Hao Chou, Tainan, TW;
Kuo-Cheng Lee, Tainan, TW;
Chung-Liang Cheng, Changhua, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device is provided. The device comprises first semiconductor wafer comprising first BEOL structure disposed on first side of first substrate, the first BEOL structure comprising first metallization layer disposed over the first substrate, second metallization layer disposed over the first metallization layer, first storage device disposed between the first and second metallization layers, and first transistor contacting the first storage device, and a first bonding layer disposed over the first BEOL structure. The device also comprises second semiconductor wafer comprising second BEOL structure disposed on first side of second substrate, the second BEOL structure comprising third metallization layer disposed over the second substrate, fourth metallization layer disposed over the third metallization layer, second storage device disposed between the third and fourth metallization layers, and second transistor contacting the second storage device, and second bonding layer disposed over the second BEOL structure and contacting the first bonding layer.