The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Aug. 25, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Anindya Nath, Essex Junction, VT (US);

Alain F. Loiseau, Williston, VT (US);

Robert J. Gauthier, Jr., Williston, VT (US);

Souvick Mitra, Essex Junction, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H01L 21/763 (2006.01);
U.S. Cl.
CPC ...
H10D 89/713 (2025.01); H01L 21/763 (2013.01);
Abstract

Embodiments of the disclosure provide a semiconductor controlled rectifier (SCR) structure and methods to form the same. The SCR structure may include a first polycrystalline semiconductor material on a first insulator and includes a first well therein. A monocrystalline semiconductor material is adjacent the first polycrystalline semiconductor material and includes an anode region and a cathode region therein. A second polycrystalline semiconductor material is on a second insulator and includes a second well therein.


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