The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Nov. 07, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventor:
PO-Yu Yang, Hsinchu City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/0172 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract
The invention discloses a semiconductor device comprising a first transistor and a second transistor, wherein the first transistor and the first transistor are separated by an air gap. The first transistor includes a first fin structure including a first source, a first drain, and a first channel. The second transistor includes a second fin structure including a second source, a second drain, and a second channel.
Yang, PO-Yu. (2026). Semiconductor device and fabrication method thereof (U.S. Patent No. 12568653). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12568653
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile