The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jan. 29, 2024
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Ying Yan, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present invention discloses an efuse unit and an application circuit, including a first fuse, a second fuse, a first NMOS transistor, a second NMOS transistor and a third NMOS transistor. One end of the first fuse serves as a Q1 port of the efuse unit, and the other end is connected to a drain end of the third NMOS transistor and a drain end of the first NMOS transistor. One end of the second fuse serves as a Q2 port of the efuse unit, and the other end is connected to a source end of the third NMOS transistor and a drain end of the second NMOS transistor. Gate ends of the first NMOS transistor and the second NMOS transistor are short-circuited to form a WLC port of the efuse unit. The present invention can avoid reading operation failure caused by low programming resistance of the fuse.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile