The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Jul. 10, 2024
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Kuo-Chiang Ting, Hsinchu City, TW;
Chi-Hsi Wu, Hsinchu City, TW;
Shang-Yun Hou, Hsinchu, TW;
Tu-Hao Yu, Hsin-Chu, TW;
Chia-Hao Hsu, Hsinchu County, TW;
Pin-Tso Lin, Hsinchu City, TW;
Chia-Hsin Chen, Tainan City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a dielectric interposer, a first RDL, a second RDL, and a plurality of conductive structures. The dielectric interposer has a first surface and a second surface opposite to the first surface. The first RDL is disposed over the first surface of the dielectric interposer. The second RDL is disposed over the second surface of the dielectric interposer. The conductive structures are disposed through the dielectric interposer and directly contact the dielectric interposer. The conductive structures are electrically connected to the first RDL and the second RDL. Each of the conductive structures has a tapered profile. A minimum width of each of the conductive structures is proximal to the first RDL, and a maximum width of each of the conductive structures is proximal to the second RDL.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile