The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Sep. 16, 2021
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

William Robert Entley, Gilbert, AZ (US);

Jennifer Lynn Anne Achtyl, Chandler, AZ (US);

Raymond Nicholas Vrtis, Carlsbad, CA (US);

Robert Gordon Ridgeway, Chandler, AZ (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); H01L 21/02118 (2013.01); H01L 21/02123 (2013.01); H01L 21/02211 (2013.01);
Abstract

A method for improving the elastic modulus of dense organosilica dielectric films (k≥2.7) without negatively impacting the film's electrical properties and with minimal to no reduction in the carbon content of the film. The method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a mixture of an alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes; and applying energy to the gaseous composition comprising the mixture of the alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.30, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon from ˜10 to ˜45 as measured by XPS.


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