The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Dec. 08, 2021
International Business Machines Corporation, Armonk, NY (US);
Heng Wu, Guilderland, NY (US);
Pouya Hashemi, Purchase, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing an MRAM device includes forming an MTJ stack on a substrate, forming a hardmask layer on the MTJ stack, forming etch pattern pads on the hardmask, forming a spacer on the sides of the etch pattern pads to form first openings exposing the hardmask, patterning the MTJ stack by a first etch using the first openings to form a plurality of first MTJ pillars separated by first vias, filling the first vias with a first dielectric, removing the spacers from the etch pattern pads to form a plurality of second openings between the first dielectric and the etch pattern pads, patterning the plurality of first MTJ pillars by a second etch using the second openings to form a plurality of second MTJ pillars separated by second vias and filling the second vias with a second dielectric to encapsulate the plurality of second MTJ pillars.