The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Aug. 30, 2022
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventors:

Xiang Peng, Shanghai, CN;

Haoyu Chen, Shanghai, CN;

Feng Ji, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/014 (2025.01); H10F 39/199 (2025.01); H10F 39/811 (2025.01);
Abstract

The present application provides a backside illuminated CMOS image sensor and a method of making the same. The backside illuminated CMOS image sensor comprises: a pixel region substrate, an isolation structure, a first dielectric layer, a metal grid, and second dielectric layer, wherein grid trenches and a metal plug are formed in the pixel region substrate, the isolation structure is located in each of the grid trenches and on the surface of the pixel region substrate outside of the grid trenches, and the isolation structure comprises a high-K dielectric layer, an insulating layer, and a metal core layer.


Find Patent Forward Citations

Peng, Xiang. (2026). Backside illuminated cmos image sensor and method of making the same (U.S. Patent No. 12563853). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12563853

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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