logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12563730 B1

PDFFull Text
Date of Patent:
Feb. 24, 2026

Filed:

Sep. 26, 2022

Three-dimensional storage having connecting structures

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Erwei Wang, Wuhan, CN;

Xiaofen Zheng, Wuhan, CN;

Lixun Gu, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

BAYES PLLC

Primary Examiner:

William B Partridge

Assistant Examiner:

Ilker undefined Ozden

Int. Cl.
CPC ...
H10B 41/27 (2023.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

A method for manufacturing a three-dimensional storage includes: providing a substrate; forming a first connecting layer and a first sacrificial layer; etching part of the first sacrificial layer to form first grooves and second grooves; forming first connecting structures in the first grooves and second connecting structures in the second grooves; forming a second connecting layer on the first sacrificial layer, the second connecting layer filling up the first and second grooves; forming a stacked structure on a surface of the second connecting layer; forming a channel structure and a gate line slit penetrating the stacked structure and extending to the first sacrificial layer; removing the first sacrificial layer and a part of the channel structure corresponding to the first sacrificial layer by the gate line slit to form an opening region; and forming an epitaxial structure layer in the opening region through the gate line slit.

Find Patent Forward Citations

Wang, Erwei. (2026). Three-dimensional storage having connecting structures (U.S. Patent No. 12563730). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12563730

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…