The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2026
Filed:
Aug. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jui-Lin Chen, Taipei, TW;
Kian-Long Lim, Hsinchu, TW;
Feng-Ming Chang, Hsinchu County, TW;
Yi-Feng Ting, Taipei, TW;
Hsin-Wen Su, Hsinchu, TW;
Lien-Jung Hung, Taipei, TW;
Ping-Wei Wang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Abstract
A semiconductor device includes a first source/drain feature on a front side of a substrate. The device includes a first backside metal line under the first source/drain feature and extending lengthwise along a first direction. The device includes a first backside via disposed between the first source/drain feature and the first backside metal line. The first backside metal line is a first bit line of a first static random access memory (SRAM) cell and is connected to the first source/drain feature through the first backside via. The first backside metal line includes a first portion and a second portion each extending widthwise along a second direction perpendicular to the first direction, the first portion is wider than the second portion, and the first portion partially lands on the first backside via. The first and the second portions are substantially aligned on one side along the first direction.