The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Jul. 19, 2023
Applicant:

Advantest Corporation, Tokyo, JP;

Inventors:

Yang Shang, Singapore, SG;

Masaichi Hashimoto, Miyagi, JP;

Makoto Shinohara, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/11 (2006.01); A23B 2/00 (2025.01); A23B 2/20 (2025.01); B65B 55/02 (2006.01);
U.S. Cl.
CPC ...
G01R 31/11 (2013.01); A23B 2/001 (2025.01); A23B 2/205 (2025.01); B65B 55/02 (2013.01); B65B 2210/06 (2013.01);
Abstract

A method, apparatus, and/or system for soft defects modeling of measurements using time-domain reflectometry. Electro-Optic Sampling based Time-Domain Reflectometry (EOS-TDR) may quickly detect soft defects in a chip under test. For example, EOS-TDR may detect soft defects in each pin from a trace-structure point at a relatively high resolution. To interpret the results in a time sensitive manner, a reference model for chips may be established from chips that are known to have met the expected quality standards. Through automated analysis of the features of the device under test waveform, soft defects of a chip may be detected that would be otherwise undetectable under time constraints, temperature variations, applied current variations, applied voltage variations, vibration variations, moisture variations, or any other kind of possible variation.


Find Patent Forward Citations

Shang, Yang. (2026). Method, apparatus, and non-transitory computer medium for detecting defects of a device under test using time-domain reflectometry (U.S. Patent No. 12560640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12560640

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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