The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Aug. 11, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Pradeep Sampath Kumar, San Jose, CA (US);
Norman L. Tam, Cupertino, CA (US);
Shashank Sharma, Fremont, CA (US);
Zhiming Jiang, Pleasonton, CA (US);
Jingmin Leng, Fremont, CA (US);
Victor Calderon, Sunnyvale, CA (US);
Mahesh Ramakrishna, Bengaluru, IN;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.