The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Feb. 25, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

P.C. Chang, Hsinchu, TW;

Ping-Hao Lin, Hsinchu, TW;

Kuo-Cheng Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80373 (2025.01); H10F 39/014 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/80377 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01);
Abstract

A photosensor includes a substrate, a photo-detecting column, a gate structure, a floating node structure and a channel structure. The substrate has a first doping type. The photo-detecting column has a second doping type and is disposed in the substrate. The gate structure is disposed on the substrate in a vertical direction, and is electrically insulated from the photo-detecting column. The floating node structure is disposed on the gate structure opposite to the photo-detecting column in the vertical direction, and is electrically insulated from the gate structure. The channel structure extends through the gate structure, is electrically insulated from the gate structure, and is electrically connected to the photo-detecting column and the floating node structure.


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