The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Aug. 02, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hao-Lin Yang, Kaohsiung, TW;
Ching-Chun Wang, Tainan, TW;
Tzu-Jui Wang, Kaohsiung County, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACUTURING COMPANY, LTD, Hsinchu, TW;
Abstract
An image sensor structure that further includes a first substrate having a front side and a back side; a photodetector disposed on the front side of the first substrate and spanning a dimension Dp along a first direction; a gate electrode formed on the front side of the first substrate and partially overlapping the photodetector; a doped region as a floating diffusion region formed on the front side of the first substrate and disposed next to the photodetector; and an interconnect structure disposed on the front surface of the first substrate and overlying the gate electrode. The interconnect structure includes a second metal layer over a first metal layer, the second metal layer further includes a first and second metal features distanced a distance Ds along the first direction, the first metal feature is electrically connected to the doped feature, and a first ratio Ds/Dp is greater than 0.3.