The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Apr. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A device includes a first circuit region including a nanostructure device and a second circuit region offset from the first circuit region. The nanostructure device has a vertical stack of nanostructures disposed in a plurality of first semiconductor layers and a gate structure wrapping around the nanostructures of the vertical stack. The second circuit region includes a bipolar junction device electrically connected to the nanostructure device and at least one diode electrically connected between a collector and a base of the bipolar junction device. At least one implant region extends through the plurality of first semiconductor layers and a plurality of second semiconductor layers that are disposed between respective vertically neighboring pairs of the plurality of first semiconductor layers. A backside interconnect structure is electrically connected to a source/drain region of the nanostructure device.