The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Apr. 05, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ta-Chun Lin, Hsinchu, TW;

Chun-Jun Lin, Hsinchu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Jhon Jhy Liaw, Hsinchu, TW;

Hsiu-Yu Kang, Taipei, TW;

Yu-Hsuan Lu, Kaohsiung, TW;

Hui-Chi Chuang, Changhua, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 62/115 (2025.01); H10D 84/013 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract

According to the present disclosure, hybrid fins positioned between two different epitaxial source/drain features are recessed to prevent conductive material from entering interior air gaps of the hybrid fins, thus, preventing short circuit between source/drain contacts and gate electrodes. Recessing the hybrid fins may be achieved by enlarging mask during semiconductor fin etch back, therefore, without increasing production cost.


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