The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Nov. 07, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eun Hyea Ko, Suwon-si, KR;
Hoon Han, Anyang-si, KR;
Byung Keun Hwang, Seongnam-si, KR;
Jeong Ho Mun, Yongin-si, KR;
Hyun-Ji Song, Anyang-si, KR;
Youn Joung Cho, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
The present disclosure provides a method for manufacturing a semiconductor device using selective vapor deposition and selective desorption. The method for manufacturing a semiconductor device includes providing a first layer having a first surface, and forming a second layer on the first layer such that a portion of the first surface is not covered by the second layer. The second layer has a second surface that meets the first surface. An inhibitor layer is formed on the first surface and the second surface, and the inhibitor layer on the second surface is selectively removed to expose the second surface. An interest layer is formed on the second surface. Physical properties of the first layer are different from physical properties of the second layer.