The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Jun. 14, 2024
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Teng-Chuan Hu, Tainan, TW;

Chu-Fu Lin, Kaohsiung, TW;

Chun-Hung Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/042 (2025.01); H10D 1/716 (2025.01);
Abstract

A capacitor structure comprises a substrate having a first side and a second side opposite to the first side; a plurality of first trenches formed on the first side of the substrate; a plurality of second trenches formed on the second side of the substrate; a first capacitor extending along the first side and into the first trenches; and a second capacitor extending along the second side and into the second trenches, wherein a first depth of each of the first trenches or a second depth of each of the second trenches is greater than half of a thickness of the substrate.


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Hu, Teng-Chuan. (2026). Capacitor structure and method for manufacturing the same (U.S. Patent No. 12557303). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12557303

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