Backside shunt contact for improved integrated circuit layout

Abstract

Techniques are provided herein to form semiconductor devices having conductive backside structures to couple various transistor structures. In some embodiments, a given conductive backside structure acts as a shunt interconnect between two transistors, such as between the gate of one transistor and the source or drain region of another transistor. In an example, an integrated circuit includes two transistor devices having semiconductor material extending between separate source and drain regions and different gate structures over or around the semiconductor material of the two transistor devices. A conductive backside structure may be formed from the backside of the integrated circuit (e.g., after removing all or most of the substrate), where the backside structure contacts the source or drain region of one transistor and the gate structure of the other transistor.