The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Oct. 19, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Chi-Yuan Shih, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second contact portions. A first semiconductor layer is over the substrate and includes a first doped region in the first contact portion, a second doped region in the slab between the first contact portion and the ridge, a third doped region and a sixth doped region in the ridge, a fourth doped region in the second contact portion, a fifth doped region in the slab between the second contact portion and the ridge, a first intrinsic region between the sixth and third doped regions, and a second intrinsic region between the sixth and fifth doped regions. A second semiconductor layer is over the first intrinsic region and between the sixth and third doped regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile