The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Feb. 14, 2025
Applicant:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Inventors:
Takashi Sato, Ibaraki, JP;
Tetsuji Fujimoto, Ibaraki, JP;
Toshio Kitamura, Ibaraki, JP;
Masatomo Shibata, Ibaraki, JP;
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/02 (2006.01); B32B 3/00 (2006.01); B32B 3/14 (2006.01); B32B 3/18 (2006.01); C30B 25/16 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); B32B 3/00 (2013.01); B32B 3/14 (2013.01); B32B 3/18 (2013.01); C30B 25/165 (2013.01); C30B 25/20 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01);
Abstract
There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which Ge concentration in the substrate is 3×10cmor more; and among peaks appearing in a histogram of diameters of etch pits during etching applied to the main surface with an alkaline etching solution, a first peak having a smallest diameter is a single peak having no shoulder.