The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Aug. 29, 2023
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Satoshi Kobayashi, Tokyo, JP;

Kai Minamizaki, Tokyo, JP;

Akira Mizutani, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); H01L 21/304 (2013.01); H01L 21/67092 (2013.01); H01L 21/6836 (2013.01); H01L 2221/68327 (2013.01);
Abstract

A wafer processing method includes emitting a laser beam along an annular line that is a predetermined distance inward of the outer circumferential edge of the first wafer to form, in the first wafer, an annular first modified layer and a first crack extending from the first modified layer to make an appearance on the front surface, thereby causing the first wafer to become warped at an outer circumferential region thereof that lies closer to the outer circumferential edge than does the first modified layer and the first crack; bonding the front surface of the first wafer to a second wafer to form a bonded wafer stack; and grinding a rear surface of the first wafer of the bonded wafer stack to thin the first wafer to a finish thickness.


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