The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

May. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Jen Chen, Jhubei, TW;

Wei-Chun Pai, Hsinchu, TW;

Cheng Wei Ho, Taoyuan, TW;

Sheng-Huan Chiu, Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 24/24 (2013.01); H01L 23/5381 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 25/0655 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/5385 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/16268 (2013.01); H01L 2224/2401 (2013.01); H01L 2224/2405 (2013.01); H01L 2224/24225 (2013.01); H01L 2224/32265 (2013.01); H01L 2224/73204 (2013.01);
Abstract

In an embodiment, a device includes: an integrated circuit die including a die connector; a dielectric layer on the integrated circuit die; an under-bump metallurgy layer having a line portion on the dielectric layer and having a via portion extending through the dielectric layer to contact the die connector; a through via on the line portion of the under-bump metallurgy layer, the through via having a first curved sidewall proximate the die connector, the through via having a second curved sidewall distal the die connector, the first curved sidewall having a longer arc length than the second curved sidewall; and an encapsulant around the through via and the under-bump metallurgy layer.


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