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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12550646 B1

PDFFull Text
Date of Patent:
Feb. 10, 2026

Filed:

Jul. 12, 2019

Selectively etching for nanowires

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Daniel Peter, Campbell, CA (US);

Jun Xue, San Jose, CA (US);

Samantha Siamhwa Tan, Fremont, CA (US);

Yang Pan, Los Altos, CA (US);

Younghee Lee, Pleasanton, CA (US);

Alexander Kabansky, Santa Clara, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Beyer Law Group LLP

Primary Examiner:

Thomas T Pham

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01);
Abstract

A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15° C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.

Find Patent Forward Citations

Peter, Daniel. (2026). Selectively etching for nanowires (U.S. Patent No. 12550646). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550646

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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