The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jul. 31, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shahaji B. More, Hsinchu, TW;

Cheng-Wei Chang, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H01L 21/285 (2006.01); H10D 62/13 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6219 (2025.01); H01L 21/28518 (2013.01); H10D 62/151 (2025.01); H10D 64/62 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01);
Abstract

A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first source/drain epitaxial feature disposed in a first region, and the first source/drain epitaxial feature is asymmetric with respect to a fin. The structure further includes a second source/drain epitaxial feature disposed in the first region, a first dielectric feature disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, and a conductive feature disposed over the first and second source/drain epitaxial features and the first dielectric feature.


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