The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

May. 08, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Wei Lin, Taichung, TW;

Meng-Sheng Chang, Hsinchu County, TW;

Shao-Yu Chou, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 13/0038 (2013.01);
Abstract

A memory device is provided and including a memory array including multiple memory cells each including a memory unit; and a first number of first transistors coupled in series between the memory unit and a first voltage terminal. The memory device further includes a voltage generating circuit coupled between the memory array and a second voltage terminal. The voltage generating circuit includes multiple voltage divider circuits each including a second number of second transistors coupled in series to a corresponding one in multiple data lines to a corresponding column of the memory cells.


Find Patent Forward Citations

Lin, Yu-Wei. (2026). Memory device and operating method thereof (U.S. Patent No. 12548620). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12548620

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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