The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Dec. 31, 2020
Applicant:

Nova Ltd., Rehovot, IL;

Inventors:

Barak Bringoltz, Rehovot, IL;

Ran Yacoby, Rehovot, IL;

Ofer Shlagman, Rehovot, IL;

Boaz Sturlesi, Rehovot, IL;

Assignee:

Nova Ltd., Rehovot, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G06F 30/27 (2020.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
G03F 7/705 (2013.01); G03F 7/70508 (2013.01); G03F 7/706841 (2023.05); G06F 30/27 (2020.01); G06F 30/398 (2020.01);
Abstract

A system and methods for OCD metrology are provided including receiving reference parameters, receiving multiple sets of measured scatterometric data, and receiving an optical model designed to generate one or more sets of model scatterometric data according to a set of pattern parameters, and training a machine learning model by applying, during the training, target features including the reference parameters, and by applying input features including the sets of measured scatterometric data and the sets of model scatterometric data, such that the trained machine learning model estimates new wafer pattern parameters from subsequently sets of measured scatterometric data.


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