The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jan. 31, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shih-Yu Chang, Yunlin County, TW;
Chien-Han Chen, Nantou County, TW;
Chien-Chih Chiu, Tainan, TW;
Chi-Che Tseng, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes depositing an inter-metal dielectric (IMD) layer over a conductive line. A via opening is formed in the IMD layer and directly over the conductive line. A width of the conductive line is greater than a width of the via opening. An overlay measurement is performed. The overlay measurement includes obtaining a backscattered electron image of the via opening and the conductive line and determining an overlay between the via opening and the conductive line according to the backscattered electron image.