The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jan. 04, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Charlotte Cutler, Albany, NY (US);
David Conklin, Saratoga Springs, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/039 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/0273 (2013.01); H01L 21/0332 (2013.01); H01L 21/3065 (2013.01); H01L 21/31144 (2013.01); G03F 7/0392 (2013.01); H01L 21/0226 (2013.01); H01L 21/0337 (2013.01);
Abstract
A method of patterning a substrate includes exposing a photoresist layer on the substrate with a pattern of actinic radiation to form a chemically reactive surface pattern, and coating, at the track system, a spin-on-material to convert the chemically reactive surface pattern to a photoresist surface mask pattern. The method further includes etching the photoresist layer using the photoresist surface mask pattern as a first etch mask to form a photoresist mask pattern, and etching a layer to be etched with the photoresist mask pattern as a second etch mask.