The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
May. 10, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
David Eitan Barlaz, Albany, NY (US);
Angelique Raley, Albany, NY (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/268 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02636 (2013.01); H01J 37/32339 (2013.01); H01J 37/32715 (2013.01); H01L 21/268 (2013.01); H01L 21/3065 (2013.01);
Abstract
A method includes forming a first masking layer over a substrate, the first masking layer including a first mask line and a second mask line, heating respective top surfaces of the first mask line and the second mask line with polarized light, and forming a second masking layer over the first masking layer with an area selective deposition process. The second masking layer is thinner over a sidewall of the first mask line than over a top surface of the first mask line.