The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Aug. 11, 2023
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Michael Kirsch, Regensburg, DE;

Patrick Hanekamp, Laaber, DE;

Werner Robl, Regensburg, DE;

Klemens Prügl, Regensburg, DE;

Juergen Zimmer, Neubiberg, DE;

Christoph Oswald, Riemerling, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); C23C 14/16 (2006.01); C23C 14/34 (2006.01); C23C 28/02 (2006.01); C25D 3/56 (2006.01); C25D 5/02 (2006.01); C25D 7/12 (2006.01); G01R 33/02 (2006.01); H10N 50/01 (2023.01); H10N 59/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); C23C 14/165 (2013.01); C23C 14/3464 (2013.01); C23C 28/021 (2013.01); C25D 3/562 (2013.01); C25D 5/022 (2013.01); C25D 7/123 (2013.01); G01R 33/02 (2013.01); H10N 50/01 (2023.02); H10N 59/00 (2023.02);
Abstract

A layered structure includes a silicon-based substrate comprising a substrate surface; a titanium-copper seed layer arranged on the substrate surface, wherein the titanium-copper seed layer comprises a titanium layer and a copper layer, wherein the titanium layer is arranged on the substrate surface such that covalent bonds are formed between the titanium layer and silicon of the silicon-based substrate, and wherein the copper layer is arranged directly on the titanium layer, such that the titanium layer is arranged between the substrate surface and the copper layer; and a nickel-iron plating layer arranged directly on the copper layer of the titanium-copper seed layer such that the titanium-copper seed layer is arranged between the silicon-based substrate and the nickel-iron plating layer.


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