The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Feb. 02, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Georgios Vellianitis, Heverlee, BE;

Marcus Johannes Henricus Van Dal, Linden, BE;

Gerben Doornbos, Kessel-Lo, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02);
Abstract

The present disclosure relates to an integrated chip including a ferroelectric layer. The ferroelectric layer includes a ferroelectric material. A first relaxation layer including a first material, different from the ferroelectric material, is on a first side of the ferroelectric layer. A second relaxation layer including a second material, different from the ferroelectric material, is on a second side of the ferroelectric layer, opposite the first side. A Young's modulus of the first relaxation layer is less than a Young's modulus of the ferroelectric layer.


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