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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12538819 B1

PDFFull Text
Date of Patent:
Jan. 27, 2026

Filed:

Jul. 05, 2022

Inductor rf isolation structure in an interposer and methods of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Hsien-Wei Chen, Hsinchu, TW;

Meng-Liang Lin, Hsinchu, TW;

Shin-Puu Jeng, Po-Shan Village, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Attorney:

The Marbury Law Group, PLLC

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Pinaki undefined Das

Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01F 27/28 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/14 (2006.01); H01L 23/552 (2006.01); H01L 23/58 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01F 27/2804 (2013.01); H01L 21/4857 (2013.01); H01L 23/552 (2013.01); H01L 23/585 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 23/145 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32238 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/1902 (2013.01); H01L 2924/19042 (2013.01);
Abstract

A semiconductor structure includes an interposer including redistribution wiring interconnects and redistribution insulating layers; a first semiconductor die attached to the interposer through a first array of solder material portions; and a second semiconductor die attached to the interposer through a second array of solder material portions. The interposer includes at least one inductor structure located between an area of the first array of solder material portions and an area of the second array of solder material portions in a plan view and laterally encloses a respective area in the plan view.

Find Patent Forward Citations

Quick Actions:

Chen, Hsien-Wei. (2026). Inductor rf isolation structure in an interposer and methods of forming the same (U.S. Patent No. 12538819). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12538819

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