The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jun. 16, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ching-Jing Wu, Zaoqiao Township, TW;
Yun-Chin Tsou, Hsinchu, TW;
An Shun Teng, Hsinchu, TW;
Mingni Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a semiconductor structure and a manufacturing method, and more particularly to a 3D metal insulator metal (MIM) capacitor structure. The MIM capacitor structure includes a first capacitor electrode formed on a top surface of a substrate, a dielectric layer formed on top and side surfaces of the first capacitor electrode and on the top surface of the substrate, and a second capacitor electrode formed on top and side surfaces of the dielectric layer. The first capacitor electrode has a first width. The second capacitor electrode has a second width greater than the first width.