The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jul. 05, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Hung Liao, Taichung, TW;
Lin-Yu Huang, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure includes a gate structure formed over a substrate. The semiconductor device structure also includes a source/drain structure formed beside the gate structure. The semiconductor device structure further includes a contact structure formed over the source/drain structure. The semiconductor device structure also includes a first cap layer formed over the contact structure. The semiconductor device structure further includes a dielectric structure extending from a top surface of the first cap layer into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.