Fully-aligned and dielectric damage-less top via interconnect structure

Abstract

An interconnect structure is provided the includes a top electrically conductive via structure that is fully-aligned to a bottom electrically conductive line structure. The interconnect structure has a maximized contact area between the top electrically conductive via structure and the bottom electrically conductive line structure without metal fangs that are caused by over etching. The dielectric surface of the interconnect dielectric material layer that is adjacent to the top electrically conductive via structure is free of reactive ion etch (RIE) damage. Further, there is no line wiggling since the bottom electrically conductive line structure is formed by a substrative metal etch. Further, there is no via distortion since the via opening used to house the top electrically conductive via structure has a density and aspect ratio that are low enough to avoid via distortion.