The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

May. 24, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Te-Chih Hsiung, Taipei, TW;

Jyun-De Wu, New Taipei, TW;

Yi-Chun Chang, Hsinchu, TW;

Yi-Chen Wang, Hsinchu County, TW;

Yuan-Tien Tu, Chiayi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01);
Abstract

A semiconductor structure includes a contact plug on a source/drain region of a transistor, and a via on the contact plug. The via includes a lower portion and an upper portion over the lower portion, the lower portion of the via tapers upward, and the upper portion of the via tapers downward. The semiconductor structure further includes a metal line on the via.


Find Patent Forward Citations

Quick Actions:

Hsiung, Te-Chih. (2026). Fin field effect transistor (finfet) having hourglass-shaped via structure on source/drain and method for forming the same (U.S. Patent No. 12538777). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12538777

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