The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Mar. 01, 2024
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Che-Cheng Chang, New Taipei, TW;
Chih-Han Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/7681 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 21/76804 (2013.01); H01L 23/485 (2013.01);
Abstract
A device comprises a non-insulator structure, a dielectric layer, a metal via, a metal line, and a dielectric structure. The dielectric layer is over the non-insulator structure. The metal via is in a lower portion of the dielectric layer. The metal line is in an upper portion of the dielectric layer. The dielectric structure is embedded in a recessed region in the lower portion of the dielectric layer. The dielectric structure has a tapered top portion interfacing the metal via.