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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12538762 B1

PDFFull Text
Date of Patent:
Jan. 27, 2026

Filed:

Sep. 13, 2023

Processing method of bonded wafer

Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Kazuma Sekiya, Tokyo, JP;

Kazuya Hirata, Tokyo, JP;

Hayato Iga, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:

GREER BURNS & CRAIN, LTD.

Primary Examiner:

Benjamin A Schiffman

Int. Cl.
CPC ...
H01L 21/02 (2006.01); B23K 26/08 (2014.01); B23K 26/40 (2014.01); B23K 26/53 (2014.01); H01L 21/18 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01); H01L 21/78 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02021 (2013.01); B23K 26/0853 (2013.01); B23K 26/40 (2013.01); B23K 26/53 (2015.10); H01L 21/02013 (2013.01); H01L 21/02016 (2013.01); H01L 21/185 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/67092 (2013.01); H01L 21/67115 (2013.01); H01L 21/78 (2013.01); B23K 2101/40 (2018.08);
Abstract

A processing method of a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part is to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In the forming the modified layers, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer in a direction from an inner side of the first wafer toward an outer side thereof, so that the plurality of ring-shaped modified layers are formed in a form of descending stairs.

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