The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
May. 11, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Yuan Chen, Hsinchu, TW;
Meng-Huan Jao, Taichung, TW;
Huan-Chieh Su, Changhua County, TW;
Cheng-Chi Chuang, New Taipei, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a dummy fin structure, a mask layer, a first source/drain contact, and an isolation plug. The gate structure crosses the channel layer. The first source/drain epitaxial structure and the second source/drain epitaxial structure are on opposite sides of the channel layer. The dummy fin structure is in contact with the first source/drain epitaxial structure. The mask layer is over the dummy fin structure. The first source/drain contact is over and electrically connected to the first source/drain epitaxial structure. The isolation plug is over the mask layer and in contact with the first source/drain contact. The isolation plug is directly over the first source/drain contact and the mask layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile