The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jul. 28, 2022
Micron Technology, Inc., Boise, ID (US);
Raja Kumar Varma Manthena, Boise, ID (US);
Yoshiaki Fukuzumi, Yokohama, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for lateral etch stops for access line formation in a memory die are described. A memory die may be formed with isolation regions that provide an etch stop to limit the extent of voids formed by removing a sacrificial material between layers of a dielectric region. For example, first trenches may be formed through a stack of alternating layers of a dielectric material and a sacrificial material, in which one or more materials may formed. Second trenches may be formed between a first trench and an array portion of the memory die, or between pairs of the first trenches, which may support the removal of at least a portion of the sacrificial material to form voids for access line formation. However, the materials formed in the first trenches may provide a boundary, or a restriction zone, that limits an extent of the material removal operation.