The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Jul. 13, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Robert D. Clark, Fremont, CA (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76867 (2013.01); H01L 21/76828 (2013.01); H01L 21/76834 (2013.01); H01L 21/7685 (2013.01); H01L 21/76852 (2013.01); H01L 21/76868 (2013.01); H01L 21/76885 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 21/76865 (2013.01); H01L 21/76873 (2013.01); H01L 21/76879 (2013.01);
Abstract
A method of forming a semiconductor device includes providing a substrate having a patterned film including manganese; depositing a graphene layer over exposed surfaces of the patterned film; depositing a dielectric layer containing silicon and oxygen over the graphene layer; and heat-treating the substrate to form a manganese-containing diffusion barrier region between the graphene layer and the dielectric layer.
Clark, Robert. (2026). Barrier schemes for metallization using manganese and graphene (U.S. Patent No. 12532719). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12532719
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile