The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Dec. 21, 2021
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Wilfred Gomes, Portland, OR (US);
Abhishek Anil Sharma, Portland, OR (US);
Uygar Avci, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10B 53/40 (2023.01); H10D 1/68 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 53/40 (2023.02); H10D 1/716 (2025.01); H10D 30/6755 (2025.01);
Abstract
Integrated circuits with embedded memory that includes double-walled ferroelectric capacitors over an array of access transistors. Capacitor access transistors may be recessed channel array transistors (RCATs) implemented in a monocrystalline material that has been transferred from a donor wafer, or implemented in an amorphous or polycrystalline semiconductor material that has been deposited, such as a metal oxide semiconductor.