The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Jan. 03, 2023
Applicants:

Changxin Memory Technologies, Inc., Hefei, CN;

Changxin Jidian (Beijing) Memory Technologies Co., Ltd., Beijing, CN;

Inventors:

Xiang Liu, Hefei, CN;

Bin Yang, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/20 (2023.02);
Abstract

The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes a substrate and a stacked structure located on the substrate; a doped region located between the stacked structure and the substrate, where on a section perpendicular to the substrate, the doped region includes a top doped region, a bottom doped region, and an intermediate doped region connecting the top doped region to the bottom doped region, in a direction parallel to the substrate, the top doped region has a first width, the bottom doped region has a second width, the intermediate doped region has a gradually changing third width, the first width is greater than the second width, and the third width decreases gradually along a direction away from the substrate.


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