The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jun. 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yuting Cheng, Taoyuan, TW;
Kuan-Kan Hu, Hsinchu, TW;
Tzu Pei Chen, Taipei, TW;
Chia-Hung Chu, Taipei, TW;
PO-Chin Chang, Taichung, TW;
Sung-Li Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a first transistor over a substrate, in which the first transistor includes first source/drain epitaxy structures; forming a second transistor over the first transistor, in which the second transistor includes second source/drain epitaxy structures; forming an opening extending through one of the second source/drain epitaxy structures and exposing a top surface of one of the first source/drain epitaxy structures; performing a first deposition process to form a first metal in the opening, in which a first void is formed in the first metal during the first deposition process; performing a first etching back process to the first metal until the first void is absent; and performing a second deposition process to form a second metal in the opening and over the first metal.